Defect-related photoluminescence of hexagonal boron nitride

Temperature dependence of the energy bandgap of two-dimensional hexagonal boron nitride probed by excitonic photoluminescence

Photon bunching in cathodoluminescence.

We have measured the second order correlation function [g^{(2)}(τ)] of the cathodoluminescence intensity resulting from the excitation by fast electrons of defect centers in wide band-gap semiconductor nanocrystals of diamond and hexagonal boron nitride. We show that the cathodoluminescence second order correlation function g^{(2)}(τ) of multiple defect centers is dominated by a large, nanoseco...

Origin of Improved Optical Quality of Monolayer Molybdenum Disulfide Grown on Hexagonal Boron Nitride Substrate.

Monolayer MoS2 is synthesized on hexagonal boron nitride (h-BN) flakes with a simple, high-yield method. Monolayer MoS2 on h-BN exhibits improved optical quality. Combining the theoretical and experimental analysis, it is concluded that the enhanced photoluminescence and Raman intensities of monolayer MoS2 probably originate from the relatively weak doping effect from the h-BN substrate rather ...

Correction to Formation and Dynamics of Electron-Irradiation-Induced Defects in Hexagonal Boron Nitride at Elevated Temperatures.

The atomic structure, stability, and dynamics of defects in hexagonal boron nitride (h-BN) are investigated using an aberration-corrected transmission electron microscope operated at 80 kV between room temperature and 1000 °C. At temperatures above 700 °C, parallelogram- and hexagon-shaped defects with zigzag edges become prominent, in contrast to the triangular defects typically observed at lo...

Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunnelling microscopy.

Defects play a key role in determining the properties and technological applications of nanoscale materials and, because they tend to be highly localized, characterizing them at the single-defect level is of particular importance. Scanning tunnelling microscopy has long been used to image the electronic structure of individual point defects in conductors, semiconductors and ultrathin films, but...